Piezoresistive microelectromechanical sensors (MEMS) in silicon are ideally suited for measuring physical quantities such as pressure, force, flow and acceleration. They feature high sensitivity with small component size, high signal-to-noise ratio and electronic stability, as well as a very linear characteristic and comparatively low cost. Piezoresistive pressure sensors in particular are usually designed for temperatures up to approx.130°C.
The raw signals of the sensor element are processed by an ASIC, which also contains the calibration data for the temperature compensation of the output signal. In the extended temperature range, hardly any commercial ASICs are currently available. Until now, the ASIC has been spatially separated from the measurement location of the pressure sensor chip. This reduces the measurement accuracy, increases the installation space and increases the manufacturing costs.
So an analog temperature compensation integrated on the sensor chip was designed and implemented for temperatures up to about 300°C.
Advantages:
• no high-temperature ASICs for temperature compensation
• Avoidance of systematic temperature errors, due to spatial settling
• Improved dynamics of the system during temperature changes
• Reduction of package space and manufacturing costs
By adapting chip design and semiconductor technology, piezoresistive pressure sensor chips were developed and manufactured in the temperature range from +40°C to +300°C.
The result is applicable to classical piezoresistive Si pressure sensors in the temperature range up to 130°C as analog precompensation. For calibrations, fewer temperature support points are required, or depending on the desired accuracy, calibration may not be necessary at all.
The R&D work described was funded by the German Federal Ministry of Economics and Climate Protection (BMWK) in the research project "Analog Integrated Temperature Compensation for High Temperature Applications" (ANITHA). (FZK: 49MF180042)
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